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| Bulletin I0203J 06/98 IR180SG..HCB SERIES PHASE CONTROL THYRISTORS Junction Size: Wafer Size: VRRM Class: Passivation Process: Square 180 mils 4" 600 and 1200 V Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters V TM VRRM I GT V GT IH IL Maximum On-state Voltage Reverse Breakdown Voltage Max. Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current Units 1.3 V 600 and 1200 V 45 mA 1.9 V 5 to 150 mA 400 mA Test Conditions T J = 25C, I T = 25 A T J = 25C, IRRM = 300 A (1) TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 180 x 180 mils (see drawing) 100 mm, with std. < 100 > flat 350 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR180SG..HCB Series Bulletin I0203J 06/98 Ordering Information Table Device Code IR 1 180 2 S 3 G 4 12 5 H 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: S = Solderable SCR Passivation Process: G = Glassivated MESA Available Class Voltage code: Code x 100 = VRRM Metallization: H = Silver (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) 06 = 600 V 12 = 1200 V None = Probed Die in chip carrier Outline Table All dimensions are in millimeters 2 www.irf.com IR180SG..HCB Series Bulletin I0203J 06/98 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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